Front-side and Back-side IC Editing System with Coaxial Photon and Ion Optics
45-nm editing is the state-of-the art, and the OptiFIB-IV focused ion-beam instrument offers a proven circuit edit solution for 45 nm and beyond. Advanced circuit edit capability with outstanding edit throughput and unparalleled edit success rates significantly reduce time-to-market and time-to-yield for semiconductor devices. Increasing numbers of metal layers, copper metallization, smaller geometries, low-κ dielectrics, Silicon-on-Insulator (SOI), planarized passivation, and flip-chip packaging all require advanced circuit-editing capabilities. OptiFIB accesses the lowest buried metal layers though the back-side bulk silicon, allowing direct and accurate edits to be performed at every level of the circuit. High edit success rates are critical to validate proposed first silicon design changes before driving a costly mask spin.
Co-axial photon imaging through passivation and silicon
Precision copper etching over SiO2 and low-k dielectrics
Sub-pA beam current imaging and end-pointing
Backside trenching and editing
FUSION PC-based control software
Integrated FIB Assist™
Dual x,y,z micro-jet
On system support of ten different chemistries
Laser interferometer stage
A Unique Approach to Imaging...
The OptiFIB's unique coaxial column offers simultaneous imaging and ion editing and provides real-time verification of edit end-pointing. The coaxial ion and photon optics enable you to see through silicon or passivation, allowing precise and accurate alignment of the FIB and CAD layout. This patented feature enables faster circuit edit throughput compared to other FIB instruments. Studies have shown time savings in circuit edit throughput ranging from 25% to 75%.
Photon optics enable fast access to Metal-1 by viewing through silicon (photons enable non-invasive, through-SOI imaging) resulting in real-time optical imaging that can be used for accurate navigation.
FIB milling and optical imaging are performed simultaneously, providing unparalleled edit precision and control to provide direct access to critical nodes through the back-side of the device, and reduce the amount of time required to image the device using the ion beam. Less exposure of your device to the ion beam also means greater yield in circuit edit success rate. OptiFIB technology enables navigation across your device without having to turn on the ion beam, thus limiting ion exposure to fragile circuitry.
The FIB, Optical and CAD images always remain aligned with one another throughout the edit process. There is no need to remove the device or shuttle it back and forth between a FIB and a separate imaging system: OptiFIB-IV performs the entire operation with the device in place. Edits may be defined within the FIB, Optical or CAD windows.
The best copper edit chemistry solution in the industry—CU2...
The challenge of copper edit becomes a predictable routine when using the OptiFIB-IV. Sophisticated and well-proven edit recipes take the guesswork out of dealing with uneven etching of copper grain structures. OptiFIB has the only true copper etch chemistry in the circuit edit business. This also enhances device edit success rate by enabling clean cutting during circuit edit modifications.
Our unique chemistry solution for editing copper over SiO2 and Low-k provides true and reliable results for the most complex edit challenges. The copper etch chemistry minimizes over-etching of underlying low-k dielectric material down to less than 20 nm. By avoiding over-etching, OptiFIB-IV enables a precise recipe for a successful edit. The OptiFIB-IV utilizes 2nd generation enhanced copper etch solution CU2, which has been proven to etch 4-5 times faster than previous solutions.
Watch CU2 in action:
Unparalleled Precision...
High aspect ratio edits of up to 25-to-1 are OptiFIB's specialty, with the ability to access the lowest level metal through eight or more metal layers.OptiFIB-IV is capable of placing the ion beam to within an accuracy of 10 nm, allowing plenty of capability to accommodate future technology nodes.
Removal of bulk silicon, commonly called “trenching,” is a critical step in the back-side editing process. This process uses the ion beam to excavate a trench through the silicon substrate in order to get close to the active regions and access the necessary metal layers for rewiring. Through the use of its unique optical capabilities, the OptiFIB-IV provides critical information on trench floor flatness by detecting optical interference fringes.
Finishing the job...
The highly sensitive end-pointing tool detects a transition between materials, prompting termination of the ion milling process. Through its patent pending Material Contrast/Voltage Contrast (MC/VC) and Shallow Trench Isolation (STI) alignment techniques, OptiFIB-IV provides alignment to an accuracy of 10 nm, exceeding the 45 nm technology node requirements.
PC-based FUSION system control software incorporates proprietary FIB Assist™ technology acquired from Fibics Incorporated. FUSION enhances visualization with high definition imaging for FIB and Optical as well as numerous real-time image processing tools. FIB Assist provides a valuable set of features that increase speed and accuracy in circuit editing, as well as capability to track and review edits.
Options
Dual micro-jet chemistry injector
Manual joystick and knobs panel
High Accuracy Stage with Laser Interferometer (LIS)
Load lock
Expanded chemistry manifold
300mm wafer system configuration
300-mm Wafers
Editing large wafers presents a significant challenge to standard focused ion-beam instruments. OptiFIB-IV's 300-mm wafer configuration includes a large chamber, load lock and advanced electrostatic wafer chuck, for a full range of x.y stage motion to permit access to all areas of the wafer.
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