• Precision Copper Etch over SiO2 and Low-k dielectrics
• Sub-pA beam current imaging and end-pointing
• FUSION: PC-based control software
• Integrated FIB Assist ™
• Dual microjet option
• Support up to ten different chemistries
• Low resistivity metal deposition chemistry
• Optional laser interferometer stage

Hitting the target ...

The ability to produce accurate high aspect-ratio edits is critical for circuits with a high number of metallization layers and high transistor densities. The P3X-IV provides probe point access to lower interconnects for e-beam and mechanical probing with aspect ratios as high as 25:1.

Only two mask cycles per device are needed when using the P3X-IV, reducing development costs and time-to-market. The P3X-IV performs device modifications enabling faster prototype validation. FIB modification time is minimized and the success rate is maximized.

The P3X-IV platform, through its unique architecture, provides high navigation accuracy and a complete set of alignment techniques for even the most demanding edits.

The exclusive nanoBlade column uses an innovative design to provide microsurgery and imaging unmatched in the industry. The P3X-IV uses a very small "drill bit" (5 nm, 0.5 pA) - the most advanced FIB column available.

The seamless integration of both electronic and mechanical apertures within a single column enhances performance and productivity by providing a broad ranges of beam settings.

Halogen-based chemical agents selectively accelerate the milling.

All chemistry operations are done with a single injector or optional dual microJets and multi-chemistry manifold.

The most precise copper edits in the industry...

The high selectivity of the P3X-IV Copper etch chemistries minimized etching of the surrounding dielectric, while maintaining fast etching rates for decreased edit times.

The 2nd generation enhanced Cu etch solution "CU2" has proven to provide 4-5 times faster etch rates over the first generation solution CU1 while maintaining the ability to minimize over-etching of underlying low-k dielectric material. Selectivity exceeds 5:1 over SiO2, fluorine-based, and organic low-k dielectrics.

Knowing when to stop...

The highly sensitive end-pointing tool detects a change in device material that terminates the milling automatically. P3X-IV is capable of acquiring endpoint signals from a hole with nearly parallel sides.

The architecture of the P3X provides a wide range of edit capabilities. Users can have software-driven, low ion-current, end point detection for accurate milling depth.

Ease of use...

The P3X-IV is controlled using the PC-based FUSION software. FUSION incorporates proprietary FIB AssistTM technology from Fibics Incorporated. FUSION enhances the user experience with high definition imaging for FIB and optical as well as numerous real-time image processing tools. FIB Assist provides a valuable set of features that increase speed and accuracy in circuit editing, as well as capability to track and review edits. This technology for circuit edit is exclusive to the OptiFIB and includes endpoint, image enhancement, job recording, data analysis and graphing capabilities.

The system is fully compatible with the NEXS Software Suite of navigation tools. An optional Knights database reader allows existing Knights databases to be read into the NEXS Layout tool.

Options...

The P3X-IV is available in several configurations with a variety of options to meet your specific editing needs.

The High Accuracy Stage with Laser Interferometer, delivers <300nm navigation accuracy over the full range of travel. CMP Navigator (Electronic Stage) accurate alignment, and low ion-current end pointing, the P3X-IV has the highest edit success rates in the industry. A Load Lock is also available as an option.

A tilt stage option is available for cross-sectioning and physical failure analysis.

A 300mm MWS (Motorized Wafer Stage) version of the P3X-IV can perform edits on wafers up to 300mm as well as packaged parts.

Optional dual microJets and a multi-chemistry manifold are available.