High aspect ratio edits of up to 25-to-1 are OptiFIB's specialty, with the ability to access the lowest level metal through eight or more metal layers. OptiFIB-IV is capable of placing the ion beam to within an accuracy of 10 nm, allowing plenty of capability to accommodate future technology nodes.
Removal of bulk silicon, commonly called “trenching,” is a critical step in the back-side editing process. This process uses the ion beam to excavate a trench through the silicon substrate in order to get close to the active regions and access the necessary metal layers for rewiring. Through the use of its unique optical capabilities, the OptiFIB-IV provides critical information on trench floor flatness by detecting optical interference fringes.
The highly sensitive end-pointing tool detects a transition between materials, prompting termination of the ion milling process. Through its patent pending Material Contrast/Voltage Contrast (MC/VC) and Shallow Trench Isolation (STI) alignment techniques, OptiFIB-IV provides alignment to an accuracy of 10 nm, exceeding the 45 nm technology node requirements.
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