The P3X Cobra's high-performance state-of-the-art ion column produces an extremely well defined beam shape for precise edit control and demonstrates excellent milling performance. The successful integration of both electronic and mechanical apertures within a single column optimizes user performance and productivity. FIB modification time is minimized and the success rate is maximized.
Low beam current milling is the key to accurate and precise edits on 22nm technology. The P3X Cobra provides precise milling control all the way down to 1pA at 30kV.
A new advanced digital imaging board provides simplified and streamlined digital processing while significantly improving the signal-to-noise ratio at each image averaging level. A new beam blanker provides a 4X improvement in FIB box-to-milling registration accuracy over previous P3X instruments.
A 10-chemistry manifold to perform conductor deposition, insulator deposition, selective metal etch, and selective dielectric etch. The 2nd generation enhanced copper etch solution produces 4 to 5 times faster etching rates over other solutions, while providing high selectivity etching of Copper over surrounding dielectric. The Copper etch chemistry minimizes over-etching of underlying low-k dielectric material down to less than 20nm. Selectivity exceeds 5:1 over SiO2, fluorine-based and organic low-k dielectrics and outperforms competing solutions. |
