TriVision
Versatile Electrical Failure Analysis
Spatial defect localization requires an easy-to-use integrated emission and laser scanning microscopy platform. TriVision is a fully integrated electrical failure analysis platform industry-leading sensitivity for fault and defect localization. TriVision is the preferred choice for developers of advanced semiconductor devices who need a cost-effective, scalable platform designed to easily expand in step with future technology roadmaps.
Failure analysis has become increasingly complex and demanding not only from a technological standpoint, but also because of the aggressive turnaround times required for competitiveness in today's marketplace. From state-of-the-art first silicon design validation to quickly addressing key customer returns, the TriVision electrical failure analysis platform enables companies to successfully achieve time-to-market and profitability goals
- Fully integrated failure analysis platform offering best-in-class performance
- Standard, prober-based microscope for ease-of-use with packaged parts or frontside wafer/die analysis
- High NA aberration-corrected lens options for extremely high through-silicon spatial resolution
- High sensitivity, low noise SWIR InGaAs camera option for static and dynamic Photon Emission applications
- Thermoelectric InGaAs camera for IR imaging functionality without externally supplied LN2
- Custom MCT camera with patented thermal noise suppression for easily discriminating between thermal emission and photon emission
- Field expandable, flexible platform with multiple camera/sensor and lens choices
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Flexibility when you need it...
TriVision's innovative three-port optical column allows for versatile sensor configurations --including a combination of high resolution CDD camera, confocal Laser Scanning Microscope (LSM), and choice of IR camera -- depending on the target applications.
Flexibility in lens options (final optics) allows the system to be tuned for frontside and/or backside applications; package, wafer or die-level analysis; and static or dynamic diagnostic flows, providing the best balance of performance, capability, and cost.
Optimal through-silicon photon detection is achieved using the high sensitivity short-wave infrared (SWIR) InGaAs camera and aberration-corrected, high numerical aperture (NA) optics are optimized for through-silicon photon detection within the spectral range of 0.9 to 1.6µm. This low noise, high sensitivity configuration enables emission acquisitions with unmatched signal-to-noise ratios for short-integration fault detection on sub-1 volt devices. |
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Photon and Thermal emission...
Thermal Emission (TE) & Infrared Thermography (IRT). The TriVision platform can be configured for thermal applications using the third generation custom MCT (HgCdTe) camera.
Designed to discriminate between hot-carrier luminescence (electron-hole recombination) and thermal emission, the MCT camera offers the flexibility to see beyond the typical photon emission (PE) spectral range, with an extended spectral response of 0.8 to 2.15µm. Most importantly, the camera incorporates patented thermal noise suppression, allowing for greatly improved signal-to-noise above 1.6µm, ensuring good PE sensitivity and the ability to localize thermal defects. |
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Options
A high resolution, high contrast confocal Laser Scanning Microscope (LSM) option allows TriVision to become a fully integrated static and dynamic failure analysis tool, providing the perfect complement to traditional emission microscopy with excellent fault coverage for shorts and resistive defects.
IR imaging without the need for externally supplied liquid nitrogen (LN2) is provided with an optional TE-cooled InGaAs camera.
A custom HgCdTe (MCT) camera is available for developers requiring good sensitivity for both NIR Photon Emission (PE) and Thermal Emission (TE).
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TriVision is also available in optional 200/300mm wafer prober and board inspection configurations.
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